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Being a customer oriented organization we are engaged in offering a quality approved range of Dual IGBT Driver in the market. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sinks more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF).
Independently Drives Two N-Channel MOSFET
Compound CMOS and Bipolar Outputs Reduce Output Current Variation
5A sink/3A Source Current Capability
Two Channels can be connected in Parallel to Double the Drive Current