Pioneers in the industry, we offer sth80n10f7 2 n-channel power mosfet stmicroelectronics., pff3n80 n-channel power mosfet (metal-oxide-semiconductor field-effect transistor), std10n60m2 n-ch 600v 0.56ohm 7.5a mdmesh m2 stmicroelectronics and 20n60c3 power mosfet / igbt transistor from India.
₹ 55 / Piece Get Latest Price
| Voltage | 100V |
| Linear Derating Factor | 1.06 W per degree Celcius |
| Gate Charge (Qg) | 90 nC typical |
| Drain Source Resistance | 7.5 |
| Item Code | STH80N10F7-2 |
| Mounting Type | through hole |
| Make | STMicroelectronics (ST) |
| Pack | TO-247-4L (Four-lead TO-247) |
Minimum order quantity: 1 Piece
Based on the information for the STH80N10F7-2 high-performance MOSFET, here is a small, non-technical product description focused on key benefits for potential customers:
Product Focus: Extreme Efficiency Power Switch
This is a High-Power, High-Speed Switch perfect for modern power electronics. It uses ST's unique STripFET technology to ensure maximum energy savings and less heat generation in your equipment.
It's built to handle large currents up to 80A and is a great fit for applications like motor control, battery chargers, and high-efficiency converters.
The special four-pin package allows for cleaner and faster switching, boosting overall system performance and extending battery life in demanding uses.
For more enquiries or detailed technical specifications, please contact us.
₹ 20 / Piece Get Latest Price
| Voltage | 800V |
| Linear Derating Factor | 0.31 to 0.85 w/ degree celcius |
| Gate Charge (Qg) | 13 to 19 nC |
| Drain Source Resistance | 4.8 |
| Item Code | 3N80 |
| Packaging Details | TO-220F (Fullpack) TO-220 |
| Mounting Type | Through-Hole |
₹ 50 / Piece Get Latest Price
| Polarity | N Channel |
| Drain Source Voltage | 600 V |
| Drain Current | 7.5A |
| Package Type | DPAK |
| Gate Charge | 13.5 nc |
| RDS On | 560 mOhms |
| Mounting Type | SMD |
10 → ~10 A continuous drain current
NM → N-channel MOSFET
6 / 60 → 600 V drain-source voltage
STMicroelectronics → Manufacturer
ON / GE / 067607 → Internal lot, plant, or date codes (not part of the part number)
Type: N-channel Power MOSFET
VDS: 600 V
ID: ~10 A
RDS(on): ~0.7–0.9 Ω (depending on version)
Gate drive: Standard level (not logic-level)
Package: TO-220 / TO-247 (depending on variant)
₹ 150 / Piece Get Latest Price
| Mounting Type | Through Hole |
| Package/Case | TO-220-3 |
| Operating Temperature | -55°C to 150°C |
| Gate Threshold Voltage | ~3.9 V |
Rahul Bamb (Proprietor)
Parth Electronics Corporation
E-118 Navrajhans Cooperative Housing Society, Rokadia Lane Off SVP Road Boriwali(W)
Borivali West, Mumbai - 400092, Maharashtra, India