Transistors

Pioneers in the industry, we offer sth80n10f7 2 n-channel power mosfet stmicroelectronics., pff3n80 n-channel power mosfet (metal-oxide-semiconductor field-effect transistor), std10n60m2 n-ch 600v 0.56ohm 7.5a mdmesh m2 stmicroelectronics and 20n60c3 power mosfet / igbt transistor from India.

STH80N10F7 2 N-Channel Power MOSFET STMicroelectronics.

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₹ 55 / Piece Get Latest Price

Product Brochure
Voltage100V
Linear Derating Factor1.06 W per degree Celcius
Gate Charge (Qg)90 nC typical
Drain Source Resistance7.5
Item CodeSTH80N10F7-2
Mounting Typethrough hole
MakeSTMicroelectronics (ST)
PackTO-247-4L (Four-lead TO-247)

Minimum order quantity: 1 Piece

Based on the information for the STH80N10F7-2 high-performance MOSFET, here is a small, non-technical product description focused on key benefits for potential customers:

Product Focus: Extreme Efficiency Power Switch

 

This is a High-Power, High-Speed Switch perfect for modern power electronics. It uses ST's unique STripFET technology to ensure maximum energy savings and less heat generation in your equipment.
 It's built to handle large currents up to 80A and is a great fit for applications like motor control, battery chargers, and high-efficiency converters.
 The special four-pin package allows for cleaner and faster switching, boosting overall system performance and extending battery life in demanding uses.

For more enquiries or detailed technical specifications, please contact us.

PFF3N80 N-Channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)

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₹ 20 / Piece Get Latest Price

Product Brochure
Voltage800V
Linear Derating Factor0.31 to 0.85 w/ degree celcius
Gate Charge (Qg)13 to 19 nC
Drain Source Resistance4.8
Item Code3N80
Packaging DetailsTO-220F (Fullpack) TO-220
Mounting TypeThrough-Hole
PFF 3N80 is an 800V N-channel power MOSFET from Fairchild Semiconductor, often used in high-efficiency switch mode power supplies. It is designed to have excellent on-state resistance (RDS(ON)cap R sub cap D cap S open paren cap O cap N close paren end-sub ( �)), low gate charge, and superior switching performance, allowing it to withstand high energy pulses. It's also available from other manufacturers like Unisonic Technologies (as UTC 3N80) with similar specifications. 

- Key specifications Type: N-channel power MOSFET, Voltage: 800V drain-source voltage,Current, On-state resistance: Low,Switching: Fast switching performance)           
APPLICATIONS:
- High-efficiency switch mode power supplies
- High-speed switching applications
- Power adapters

STD10N60M2 N-CH 600V 0.56Ohm 7.5A MDmesh M2 STMicroelectronics

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₹ 50 / Piece Get Latest Price

Product Brochure
PolarityN Channel
Drain Source Voltage600 V
Drain Current7.5A
Package TypeDPAK
Gate Charge13.5 nc
RDS On560 mOhms
Mounting TypeSMD
How to read the marking
  • 10 → ~10 A continuous drain current

  • NMN-channel MOSFET

  • 6 / 60600 V drain-source voltage

  • STMicroelectronics → Manufacturer

  • ON / GE / 067607 → Internal lot, plant, or date codes (not part of the part number)

Key specifications (typical)
  • Type: N-channel Power MOSFET

  • VDS: 600 V

  • ID: ~10 A

  • RDS(on): ~0.7–0.9 Ω (depending on version)

  • Gate drive: Standard level (not logic-level)

  • Package: TO-220 / TO-247 (depending on variant)

20N60C3 Power MOSFET / IGBT Transistor

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₹ 150 / Piece Get Latest Price

Mounting TypeThrough Hole
Package/CaseTO-220-3
Operating Temperature-55°C to 150°C
Gate Threshold Voltage~3.9 V
The 20N60C3 is a high-voltage N-channel power switching transistor commonly used in SMPS (Switch Mode Power Supplies), inverters, and power control circuits. It belongs to the CoolMOS / high-voltage MOSFET family and is designed for high-efficiency power switching applications
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Rahul Bamb (Proprietor)
Parth Electronics Corporation
E-118 Navrajhans Cooperative Housing Society, Rokadia Lane Off SVP Road Boriwali(W)
Borivali West, Mumbai - 400092, Maharashtra, India

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